class AliITSSimuParam: public TObject

fSPDBiasVoltage(fgkSPDBiasVoltageDefault),
fSPDThresh(fgkSPDThreshDefault),
fSPDSigma(fgkSPDSigmaDefault),
 default constructor

fSPDBiasVoltage(simpar.fSPDBiasVoltage),
fSPDThresh(simpar.fSPDThresh),
fSPDSigma(simpar.fSPDSigma),
 copy constructor

 Assignment operator.

 destructor

 Set number of sigmas over which cluster disintegration is performed

 Dump all parameters

 Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
 International ATLAS II, 2D Device Simulation Framework, User Manual
 Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
 in silicon at different tempeatures.
 Inputs:
    none.
 Output:
    none.
 Return:
    The Mobility of electrons in Si at a give temprature and impurity
    concentration. [cm^2/Volt-sec]

 Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
 International ATLAS II, 2D Device Simulation Framework, User Manual
 Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
 in silicon at different tempeatures.
 Inputs:
    none.
 Output:
    none.
 Return:
    The Mobility of Hole in Si at a give temprature and impurity
    concentration. [cm^2/Volt-sec]

 Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
 from SILVACO International ATLAS II, 2D Device Simulation Framework,
 User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
 coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
 Inputs:
    none.
 Output:
    none.
 Return:
    The Diffusion Coefficient of electrons in Si at a give temprature
    and impurity concentration. [cm^2/sec]
 const Double_t kb = 1.3806503E-23; // Joules/degree K
 const Double_t qe = 1.60217646E-19; // Coulumbs.

 Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
 from SILVACO International ATLAS II, 2D Device Simulation Framework,
 User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
 coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
 Inputs:
    none.
 Output:
    none.
 Return:
    The Defusion Coefficient of Hole in Si at a give temprature and
    impurity concentration. [cm^2/sec]
    and impurity concentration. [cm^2/sec]
 const Double_t kb = 1.3806503E-23; // Joules/degree K
 const Double_t qe = 1.60217646E-19; // Coulumbs.

 Computes the Lorentz angle for electrons in Si
 Input: magnetic Field in KGauss
 Output: Lorentz angle in radians (positive if Bz is positive)
 Main Reference: NIM A 497 (2003) 389–396.
 "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.

 Computes the Lorentz angle for electrons in Si
 Input: magnetic Field in KGauss
 Output: Lorentz angle in radians (positive if Bz is positive)
 Main Reference: NIM A 497 (2003) 389–396.
 "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.

 Computes the average speed for electrons in Si under the low-field
 approximation. [cm/sec].
 Inputs:
    none.
 Output:
    none.
 Return:
    The speed the holes are traveling at due to the low field applied.
    [cm/sec]

 Computes the average speed for Holes in Si under the low-field
 approximation.[cm/sec].
 Inputs:
    none.
 Output:
    none.
 Return:
    The speed the holes are traveling at due to the low field applied.
    [cm/sec]

 Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the
 defusion of electrons or holes through a distance l [cm] caused
 by an applied voltage v [volt] through a distance d [cm] in any
  material at a temperature T [degree K]. The sigma diffusion when
  expressed in terms of the distance over which the diffusion
 occures, l=time/speed, is independent of the mobility and therefore
  the properties of the material. The charge distributions is given by
 n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e
 (m==mobility, k==Boltzman's constant, T==temparature, e==electric
 charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev.
 Inputs:
    Double_t l   Distance the charge has to travel.
 Output:
    none.
 Return:
    The Sigma due to the diffution of electrons. [cm]

 Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion
 of electrons or holes through a distance l [cm] caused by an applied
 voltage v [volt] through a distance d [cm] in any material at a
 temperature T [degree K]. The sigma diffusion when expressed in terms
 of the distance over which the diffusion occures, l=time/speed, is
 independent of the mobility and therefore the properties of the
 material. The charge distributions is given by
 n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e
 (m==mobility, k==Boltzman's constant, T==temparature, e==electric
 charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev.
 Inputs:
    Double_t l   Distance the charge has to travel.
 Output:
    none.
 Return:
    The Sigma due to the diffution of electrons. [cm]

 Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion
 of electrons or holes through a distance l [cm] caused by an applied
 voltage v [volt] through a distance d [cm] in any material at a
 temperature T [degree K]. The sigma diffusion when expressed in terms
 of the distance over which the diffusion occures, l=time/speed, is
 independent of the mobility and therefore the properties of the
 material. The charge distributions is given by
 n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e
 (m==mobility, k==Boltzman's constant, T==temparature, e==electric
 charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev.
 Inputs:
    Double_t l   Distance the charge has to travel.
 Output:
    none.
 Return:
    The Sigma due to the diffution of electrons. [cm]

 Computes the thickness of the depleted region in Si due to the
 application of an external bias voltage. From the Particle Data
 Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
 Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
 July 15 2004, ISSN 0370-2693 page 263. First equation.
 Inputs:
    Double_t dopCons           "N" doping concentration
    Double_t voltage           "V" external bias voltage
    Double_t elecCharge        "e" electronic charge
    Double_t voltBuiltIn=0.5   "V_bi" "built-in" Voltage (~0.5V for
                               resistivities typically used in detectors)
 Output:
    none.
 Return:
    The thickness of the depleted region

 Computes the thickness of the depleted region in Si due to the
 application of an external bias voltage. From the Particle Data
 Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
 Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
 July 15 2004, ISSN 0370-2693 page 263. Second Equation.
 Inputs:
    Double_t resist            "rho" resistivity (typically 1-10 kOhm cm)
    Double_t voltage           "V" external bias voltage
    Double_t mobility          "mu" charge carrier mobility
                                  (electons 1350, holes 450 cm^2/V/s)
    Double_t voltBuiltIn=0.5   "V_bi" "built-in" Voltage (~0.5V for
                               resistivities typically used in detectors)
    Double_t dielConst=1.E-12  "epsilon" dielectric constant = 11.9 *
                                (permittivity of free space) or ~ 1 pF/cm
 Output:
    none.
 Return:
    The thickness of the depleted region

 Computes the temperature dependance of the reverse bias current
 of Si detectors. From the Particle Data
 Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004)
 Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
 July 15 2004, ISSN 0370-2693 page 263.
 Inputs:
    Double_t temp         The temperature at which the current is wanted
    Double_t revBiasCurT1 The reference bias current at temp T1
    Double_t tempT1       The temperature correstponding to revBiasCurT1
    Double_t energy=1.2   Some energy [eV]
 Output:
    none.
 Return:
    The reverse bias current at the tempeature temp.

 Get SPD threshold values

Get SPD noise and baseline values

 Applies a random noise and addes the baseline

 Use Lorentz's angle

 Set the impurity concentrations in [#/cm^3]

 Returns the impurity consentration in [#/cm^3]